About the role#
As a 3D DRAM Process Integration Engineer Intern, you will work within the R&D fabrication facility to develop next-generation memory technologies. You will support the performance, reliability, and manufacturability of advanced memory structures, including charge storage devices and thin-film transistors. This role requires collaboration across multiple engineering teams to solve complex integration and circuit-related issues.
What you'll do#
- Contribute to the development of next-generation DRAM technologies and memory device components.
- Design, execute, and analyze experiments within the R&D fabrication environment.
- Partner with process development, product engineering, design, and reliability teams to resolve performance and yield challenges.
- Analyze inline, electrical, and probe data to identify operating mechanisms and sources of variability.
- Use approved AI tools to support engineering analysis, data interpretation, and technology development activities.
What you'll need#
- Current enrollment in a PhD program for Materials Science, Physics, Chemical Engineering, or a related technical field.
- Research experience in semiconductor device fabrication, electrical characterization, or material characterization.
- Understanding of semiconductor device physics and process integration concepts.
- Experience designing experiments and analyzing technical data to support engineering decisions.
- Strong written and verbal communication skills to present technical findings.
Location & details#
- Location: Boise, Idaho
- Work Modality: On-site
- Employment Type: Full-time
- Term: Rolling
About Micron Technology
Micron Technology produces memory and storage solutions including DRAM, NAND, and NOR products. The company operates as a public organization with over 43,000 employees. Founded in 1978, it maintains its headquarters in Boise, Idaho. Micron serves various markets ranging from data centers to mobile devices.
How to get in at Micron Technology
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